Indium phosphide

Indium phosphide
Names
	Other names Indium(III) phosphide
Identifiers
CAS Number	22398-80-7 ;
3D model (JSmol)	Interactive image; Interactive image;
ChemSpider	28914 ;
ECHA InfoCard	100.040.856
PubChem CID	31170;
UNII	SD36LG60G1 ;
CompTox Dashboard (EPA)	DTXSID3031444 ;
	InChI InChI=1S/In.P Key: GPXJNWSHGFTCBW-UHFFFAOYSA-N ; InChI=1/In.P/rInP/c1-2 Key: GPXJNWSHGFTCBW-HIYQQWJCAF;
	SMILES [In+3].[P-3]; [In]#P;
Properties
Chemical formula	InP
Molar mass	145.792 g/mol
Appearance	black cubic crystals
Density	4.81 g/cm3, solid
Melting point	1,062 °C (1,944 °F; 1,335 K)
Solubility	slightly soluble in acids
Band gap	1.344 eV (300 K; direct)
Electron mobility	5400 cm2/(V·s) (300 K)
Thermal conductivity	0.68 W/(cm·K) (300 K)
Refractive index (nD)	3.1 (infrared); ; 3.55 (632.8 nm)
Structure
Crystal structure	Zinc blende
Lattice constant	a = 5.8687 Å
Coordination geometry	Tetrahedral
Thermochemistry
Heat capacity (C)	45.4 J/(mol·K)
Std molar; entropy (S⦵298)	59.8 J/(mol·K)
Std enthalpy of; formation (ΔfH⦵298)	−88.7 kJ/mol
Gibbs free energy (ΔfG⦵)	−77.0 kJ/mol
Hazards
	Occupational safety and health (OHS/OSH):
Main hazards	Toxic, hydrolysis to phosphine
Safety data sheet (SDS)	External MSDS
Related compounds
Other anions	Indium nitride; Indium arsenide; Indium antimonide
Other cations	Aluminium phosphide; Gallium phosphide
Related compounds	Indium gallium phosphide; Aluminium gallium indium phosphide; Gallium indium arsenide antimonide phosphide
	Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). verify (what is ?) Infobox references

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.