Aluminium gallium indium phosphide

Aluminium gallium indium phosphide
Identifiers
3D model (JSmol)
  • Al:Ga:In = 1:1:1: InChI=1S/Al.Ga.In.3P/q3*+3;3*-3
    Key: LWRKRICXHHSDPR-UHFFFAOYSA-N
  • Al:Ga:In = 1:1:1: [Al+3].[Ga+3].[In+3].[P-3].[P-3].[P-3]
Properties
AlGaInP
Structure
Cubic
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Infobox references

Aluminium gallium indium phosphide (AlGaInP, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of multi-junction photovoltaics and optoelectronic devices. It has a direct bandgap ranging from ultraviolet to infrared photon energies.

AlGaInP is used in heterostructures for high-brightness red, orange, green, and yellow light-emitting diodes. It is also used to make diode lasers.

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