Dmitri Z. Garbuzov
Dmitri Z. Garbuzov | |
|---|---|
Dmitri Garbuzov Receiving the Lenin Prize in Russia | |
| Born | October 27, 1940 |
| Died | August 20, 2006 (aged 65) |
| Known for | Practical (Room temperature, high efficiency, and high power) diode lasers at a variety of wavelengths from visible to mid-infrared |
| Awards | Lenin Prize (1972) State Prize (1987) Elected to the Russian Academy of Sciences (1991) Humboldt Award (1992) |
| Scientific career | |
| Institutions | Ioffe Physico-Technical Institute (St. Petersburg, Russia); in latter years Princeton University (Princeton, New Jersey), Sarnoff Corporation (Princeton, New Jersey) (now integrated into SRI International), and Princeton Lightwave, Inc. (Cranbury, NJ) |
Dmitri Z. Garbuzov (October 27, 1940, Sverdlovsk (Yekaterinburg) – August 20, 2006, Princeton, New Jersey) was one of the pioneers and inventors of room-temperature continuous-wave-operating diode lasers and high-power diode lasers.
The first room-temperature, continuous-wave diode lasers were successfully invented, developed, and almost simultaneously demonstrated at the Ioffe Physico-Technical Institute in Leningrad, Russia, by a team including Garbuzov and Zhores Alferov (winner of the 2000 Nobel Prize for Physics), and by the competing team of I. Hayashi and M. Panish at Bell Telephone Laboratories in Murray Hill, New Jersey. Both teams attained this accomplishment in 1970. Garbuzov was also responsible for the development of practical high-power, high-efficiency, diode lasers at a variety of wavelength bands from visible to mid-infrared wavelengths.
Following perestroika, Garbuzov, who had served as an accomplished and respected scientist and manager within the Soviet scientific research system, established a research group in the West which employed multiple Russian émigré scientists and simultaneously contributed to three American for-profit enterprises.