Aluminium nitride

Aluminium nitride

Names
IUPAC name Aluminium nitride
Other names AlN
Identifiers
CAS Number	24304-00-5 Y
3D model (JSmol)	Interactive image Interactive image
ChEBI	CHEBI:50884 Y
ChemSpider	81668 Y
ECHA InfoCard	100.041.931
EC Number	246-140-8
Gmelin Reference	13611
PubChem CID	90455
RTECS number	BD1055000
UNII	7K47D7P3M0 Y
CompTox Dashboard (EPA)	DTXSID8066977
InChI InChI=1S/Al.N Y Key: PIGFYZPCRLYGLF-UHFFFAOYSA-N Y InChI=1/Al.N/rAlN/c1-2 Key: PIGFYZPCRLYGLF-PXKYIXAJAH
SMILES [AlH2-]1[N+]47[AlH-]2[N+][AlH-]3[N+]8([AlH2-][NH+]([AlH2-]4)[AlH2-]6)[AlH-]4[N+][AlH-]5[N+]6([AlH2-]6)[Al-]78[N+]78[AlH-]([NH+]69)[NH+]5[AlH2-][NH+]4[AlH-]7[NH+]3[AlH2-][NH+]2[AlH-]8[NH+]1[AlH2-]9 [AlH2-]1[NH+]([AlH2-]6)[AlH2-][NH+]7[AlH-]2[N+][Al-]3([N+][AlH-]9[N+]5)[N+]18[Al-]45[N+][AlH-]5[NH+]6[Al-]78[N+]78[AlH2-][NH+]5[AlH2-][N+]4([AlH2-][NH+]9[AlH2-]4)[AlH-]7[N+]34[AlH2-][NH+]2[AlH2-]8
Properties
Chemical formula	AlN
Molar mass	40.989 g/mol
Appearance	white to pale-yellow solid
Density	3.255 g/cm3
Melting point	2,500 °C (4,530 °F; 2,770 K)
Solubility in water	hydrolyses (powder), insoluble (monocrystalline)
Solubility	insoluble, subject of hydrolysis in water solutions of bases and acids
Band gap	6.015 eV (300 K, direct)
Electron mobility	~300 cm2/(V·s)
Thermal conductivity	321 W/(m·K)
Refractive index (nD)	2.048（300 k, λ = 633 nm）
Structure
Crystal structure	Wurtzite (Atmospheric)
Space group	C6v4-P63mc, No. 186, hP4
Lattice constant	a = 0.31117 nm , c = 0.49788 nm
Formula units (Z)	2
Coordination geometry	Tetrahedral
Structure
Crystal structure	Rocksalt (High-pressure)
Space group	${\displaystyle O_{h}^{5}{\text{-}}Fm{\overline {3}}m}$, No. 225, cF8
Lattice constant	a = 0.3938 nm
Formula units (Z)	4
Thermochemistry
Heat capacity (C)	30.1 J/(mol·K)
Std molar entropy (S⦵298)	20.2 J/(mol·K)
Std enthalpy of formation (ΔfH⦵298)	−318.0 kJ/mol
Gibbs free energy (ΔfG⦵)	−287.0 kJ/mol
Hazards
GHS labelling:
Pictograms
Signal word	Warning
Hazard statements	H315, H319, H335, H373, H411
Precautionary statements	P260, P264, P271, P280, P301+P330+P331, P302+P352, P303+P361+P353, P304+P340, P305+P351+P338, P310, P312, P321, P332+P313, P337+P313, P362, P363, P403+P233, P405, P501 Preview warning: Omit Rules: keep P260, omit P261
NFPA 704 (fire diamond)	1 0 0
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). Y verify (what is YN ?) Infobox references

Aluminium nitride (AlN) is a solid nitride of aluminium, which was first synthesized in 1862 by F. Briegleb and A. Geuther.

AlN is a wide-bandgap semiconductor composed of aluminium and nitrogen. It crystallizes predominantly in the wurtzite structure and exhibits a direct band gap of approximately 6 eV at room temperature The exceptionally wide bandgap enables applications in deep-ultraviolet optoelectronics, while the material's thermal conductivity 321 W/(m·K), and strong polarization effects make it an important buffer and template material for III-nitride quantum heterostructures used in high-power and high-frequency electronic devices.